3sk41 - Datasheet Exclusive

A popular, modern low-noise N-channel dual-gate MOSFET.

The 3SK41 is an (Metal-Oxide-Semiconductor Field-Effect Transistor). Unlike a standard MOSFET with one gate, the dual-gate structure (Gate 1 and Gate 2) allows for superior performance in:

The "dual-gate" design is the defining feature of the 3SK41, allowing it to excel in two specific areas:

The dual-gate architecture allows for clean, low-distortion frequency conversion. Core Strengths

): Crucial for stability, this value is exceptionally low (around 0.02 pF to 0.03 pF). This minimal feedback capacitance is what allows the 3SK41 to amplify UHF signals stably without self-oscillating. 5. How the Dual-Gate Structure Works in Circuit Design

The dual-gate structure of the 3SK41 allows for several unique circuit advantages: Reduced Feedback Capacitance:

Delivers high power gain (often exceeding 15 dB at UHF), making it highly sensitive.

is a vintage N-channel dual-gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) primarily used in high-frequency applications like VHF/UHF radio amplification. Technical Overview Device Type: Dual-gate MOSFET (Silicon N-channel). Key Manufacturers: Originally produced by Application:

) (Typically used for Automatic Gain Control or Local Oscillator injection). (Primary RF signal input). Architectural Advantages & Dynamic Performance

While newer technology has emerged, the 3SK41 remains relevant for the repair of legacy equipment, amateur radio projects, and specific RF applications requiring low noise and high gain. 1. 3SK41 Overview and Main Characteristics

Gate 2 acts as an AC ground shield between the signal input (Gate 1) and the output (Drain). This drastically minimizes the reverse transfer capacitance ( Crsscap C sub r s s end-sub

By varying the bias on the second gate (Gate 2), the gain of the MOSFET can be controlled without significantly shifting the input impedance of Gate 1. Mixing Applications:

The 3SK41 is designed for low-noise, high-gain performance at high frequencies. Below are the typical parameters for this device: Drain-Source Voltage ( cap V sub cap D cap S end-sub Drain Current ( cap I sub cap D Power Dissipation ( cap P sub cap D 250mW (0.25W) Package Type: TO-72 (4-lead metal can) Drain-Source On-Resistance ( cap R sub cap D cap S open paren o n close paren end-sub Functional Overview